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| N Channel Small Signal MOSFET 100mA 2N7002 SOT-23 1 Gate 2 Source 3 Drain DRIVES SWITCHS, RELAYS, SOLENOIDS, LAMPS, DISPLAYS, ETC. LOW OFFSET VOLTAGE LOW VOLTAGE OPERATION EASILY DRIVEN WITHOUT BUFFER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS] PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate Threshhold Voltage Drain-Source On-Resistance Drain-Source On-Voltage On-State Drain Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Power Dissipation Junction Temperature Storage Temperature Ta=25J^ CONDITION VGS=0, ID=10uA VDS=48V, VGS=0 VDS=48V, VGS=0, Tj=125J SYMBOL MIN MAX UNIT V(BR)DSS 60 Vdc IDSS 1.0 uA 1.0 mA IGSSF -10 nA VGS(th) 0.8 3.0 V RDS(on) 7.5 Ohm 7.5 Ohm V DS(on) 2.5 V 0.45 Id(on) 75 mA Ciss 60 pF Coss 25 pF Crss 5 pF ton 10 nS toff 10 nS Pc 0.35 W Tj 125 J Tstg -55 125 J VGSF=15V, VDS=0 VDS=VGS, ID=1.0A VGS=10V, ID=0.5A VGS=4.5V, ID=75mA VGS=10V, ID=0.5A VGS=4.5V, ID=75mA VGS=4.5V, VDS=10V VDS=25V, VGS=0, f=1 MHz VDS=25V, VGS=0, f=1 MHz VDS=25V, VGS=0, f=1 MHz STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Output Characteristics Transfer Characteristics On Resistance VS. Temperature Static Drain-source On Resistance STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 |
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